

Copper Interconnect Technology
Kurzinformation



inkl. MwSt. Versandinformationen
Artikel zZt. nicht lieferbar
Artikel zZt. nicht lieferbar

Beschreibung
Since overall circuit performance has depended primarily on transistor properties, previous efforts to enhance circuit and system speed were focused on transistors as well. During the last decade, however, the parasitic resistance, capacitance, and inductance associated with interconnections began to influence circuit performance and will be the primary factors in the evolution of nanoscale ULSI technology. Because metallic conductivity and resistance to electromigration of bulk copper (Cu) are better than aluminum, use of copper and low-k materials is now prevalent in the international microelectronics industry. As the feature size of the Cu-lines forming interconnects is scaled, resistivity of the lines increases. At the same time electromigration and stress-induced voids due to increased current density become significant reliability issues. Although copper/low-k technology has become fairly mature, there is no single book available on the promise and challenges of these next-generation technologies. In this book, a leader in the field describes advanced laser systems with lower radiation wavelengths, photolithography materials, and mathematical modeling approaches to address the challenges of Cu-interconnect technology. von Gupta, Tapan
Produktdetails

So garantieren wir Dir zu jeder Zeit Premiumqualität.
Über den Autor
- Hardcover
- 410 Seiten
- Erschienen 2013
- ISTE Ltd and John Wiley & S...
- Kartoniert
- 300 Seiten
- Erschienen 2005
- Hüthig
- hardcover -
- Erschienen 1996
- Fossil Verlag
- paperback
- 600 Seiten
- Erschienen 2008
- Springer
- Kartoniert
- 195 Seiten
- Erschienen 2002
- Vieweg Verlag
- Gebunden
- 557 Seiten
- Erschienen 2012
- Wiley-VCH
- hardcover
- 126 Seiten
- Erschienen 1998
- Fossil Verlag Köln,
- Hardcover
- 1120 Seiten
- Erschienen 2003
- Addison Wesley
- Hardcover
- 200 Seiten
- Erschienen 2005
- Springer